3055 Mosfet



Type Designator: TIP3055

Material of Transistor: Si

5 1 Publication Order Number: MTD3055V/D MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to.

Polarity: NPN

  1. 2N3055 Bipolar Transistors - BJT are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for 2N3055 Bipolar Transistors - BJT.
  2. Search Partnumber: Match&Start with '3055' - Total: 5. List of Unclassifed Man. N-Channel 30-V (D-S) MOSFET.
  3. MOSFET – Power, N-Channel, DPAK/IPAK 9.0 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features. NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable.
  4. N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET, MTP3055 datasheet, MTP3055 circuit, MTP3055 data sheet: STMICROELECTRONICS, alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated.

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Evernote internal link. Maximum Collector-Emitter Voltage |Vce|: 70 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

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Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO218

TIP3055 Transistor Equivalent Substitute - Cross-Reference Search


TIP3055 Datasheet (PDF)

0.1. tip3055r.pdf Size:104K _motorola

Order this documentMOTOROLAby TIP3055/DSEMICONDUCTOR TECHNICAL DATANPNTIP3055Complementary Silicon PowerPNPTIP2955Transistors. . . designed for general purpose switching and ampli

0.2. tip2955 tip3055.pdf Size:87K _st

TIP2955TIP3055Complementary power transistorsFeatures Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose Audio Amplifier321DescriptionTO-247The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications.Figure 1. Internal sche

3055 Mosfet Datasheet Pdf

0.3. tip3055 tip2955.pdf Size:61K _onsemi

TIP3055 (NPN),TIP2955 (PNP)Complementary SiliconPower TransistorsDesigned for general-purpose switching and amplifier applications.http://onsemi.comFeatures DC Current Gain - 15 AMPEREhFE = 20 - 70 @ IC POWER TRANSISTORS= 4.0 AdcCOMPLEMENTARY SILICON Collector-Emitter Saturation Voltage - 60 VOLTS, 90 WATTSVCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc Excell

0.4. tip3055.pdf Size:82K _bourns

TIP3055NPN SILICON POWER TRANSISTOR Designed for Complementary Use with the SOT-93 PACKAGETIP2955 Series (TOP VIEW) 90 W at 25C Case TemperatureB1 15 A Continuous Collector CurrentC 2 Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute maximum ratings at 25C case temperature (unless otherwis

0.5. tip2955 tip3055.pdf Size:107K _mospec Cisco anyconnect 4.9.01095.

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0.6. tip2955f tip3055f.pdf Size:290K _cdil

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPOWER TRANSISTORS TIP2955F PNPTIP3055F NPNTO- 3P Fully IsolatedPlastic PackageBCEDesigned for General Purpose Switching and Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector-Emitter Voltage VCEO 60 VCollector-Emitter Voltage VCER 70 VCollector-

0.7. tip3055.pdf Size:192K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon NPN Power Transistor TIP3055DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CComplement to Type TIP2955Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose

0.8. tip3055t.pdf Size:214K _inchange_semiconductor

isc Silicon NPN Power Transistor TIP3055TDESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 0.8V(Max)@ I = 4ACE(sat CComplement to Type TIP2955TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifier

P 3055 Mosfet Datasheet

Datasheet: TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F, TIP30, TIP3054, BC546, TIP30A, TIP30B, TIP30C, TIP30D, TIP30E, TIP30F, TIP31, TIP31A.


3055 Mosfet Circuit



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3055 Mosfet