Part Number : K3878
The K3878 is a three-terminal silicon device with current conduction capability of 9A, fast switching speed, low on-state resistance, breakdown voltage rating of 900V, and max. Threshold voltage of 4 volts.They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits,UPS, switching regulator and general purpose switching applications. 2SK3878 Datasheet, 2SK3878 PDF, 2SK3878 Data sheet, 2SK3878 manual, 2SK3878 pdf, 2SK3878, datenblatt, Electronics 2SK3878, alldatasheet, free, datasheet, Datasheets. K3878 are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for K3878. Manufacturer of MOSFET - FQA38N30 FAIRCHILD MOSFET, IGBT Mosfet, MOSFET IXFN38N100Q2 and DSEI2X101 12A IGBT Module offered by Logitech Electronics, Mumbai, Maharashtra. K3878 K2610 K2698 K4108 IRFPE50 IRFPC50 IRFZ48 IRFB260 IRFP4321 IRF4321 IRLB4132 IRFB3607 IRFB4110 IRFB4227 IRFP90N20 IRFP360 IRFP22N60C3 J6810A J6810D FDA59N30 FQA38N30.
Function : Silicon N-Channel MOS Field Effect Transistor
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Manufacturers : Toshiba
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Application : Switching Regulator
2SK3878 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja De ..
Features for K3878 Warblade mk ii unity3d update.emv software.
1. Low drain-source ON-resistance: RDS (ON)= 1.0 Ω(typ.)
2. High forward transfer admittance: ⎪Yfs⎪= 7.0 S (typ.)
3. Low leakage current: IDSS= 100 μA (max) (VDS= 720 V)
4. Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
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Absolute Maximum Ratings (Ta = 25°C)
Persamaan Mosfet K3878
1. Drain-source voltage : VDSS = 900 V
2. Drain-gate voltage (RGS = 20 kΩ) : VDGR = 900 V
3. Gate-source voltage : VGSS = ±30 V
4. Drain current DC : ID = 9, Pulse : IDP = 27 A
5. Drain power dissipation (Tc = 25°C) : PD = 150 W
6. Single pulse avalanche energy : EAS = 778 mJ
7. Avalanche current : IAR = 9 A
8. Repetitive avalanche energy : EAR = 15 mJ
9. Channel temperature : Tch = 150°C
Pinouts :
K3878 Datasheet
Other data sheets within the file : 2SK3878
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